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Ferroelectric semiconductor field effect transistors (FeSmFETs), which employferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channelmaterial as opposed to the gate dielectric in conventional ferroelectric FETs(FeFETs) were prepared and measured from room to the liquid-heliumtemperatures. These FeSmFETs were found to yield evidence for the reorientationof the electrical polarization and an electric field induced metallic state in{\alpha}-In2Se3. Our findings suggest that FeSmFETs can serve as a platform forthe fundamental study of ferroelectric metals as well as the exploration of theintegration of data storage and logic operations in the same device.

Electric field induced metallic behavior in thin crystals of ferroelectric {\alpha}-In2Se3