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A non-relaxing method based on cyclic gate bias stress is used to probe theinterface or near-interface traps in the SiO$_2$/4H-SiC system over the whole4H-SiC band gap. The temperature dependent instability of the threshold voltagein lateral MOSFETs is investigated and two separated trapping mechanisms werefound. One mechanism is nearly temperature independent and it is correlated tothe presence of near interface oxide traps that are trapped via tunneling fromthe semiconductor. The second mechanism, having an activation energy of 0.1 eV,has been correlated to the presence of intrinsic defects at the SiO$_2$/4H-SiCinterface.

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs