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We present and discuss an original method to synthesize disorderedNanostructured (NS) VO$_x$ films with controlled stoichiometry and tunableelectronic structures. In these NS films, the original lattice symmetry of thebulk vanadium oxides is broken and atoms are arranged in a highly disorderedstructure . The stoichiometry-dependent disorder as a function of the oxygenconcentration has been characterized by in-situ X-ray Absorption Near-EdgeStructure (XANES) spectroscopy identifying the spectroscopic fingerprints.Results show structural rearrangements that deviate from the octahedralsymmetry with different coexisting disordered phases. The modulation of theelectronic structure of the NS films based on the resulted stoichiometry andthe quantum confinement in the NS particles are also discussed. We demonstratethe possibility to modulate the electronic structure of VO$_x$ NS filmsaccessing new disordered atomic configurations with a controlled stoichiometrythat provides an extraordinary opportunity to match a wide number oftechnological applications.

Tunable electronic structure and stoichiometry dependent disorder in Nanostructured VO$_x$ films