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In this work we develop and study single-photon sources based on InGaAsquantum dots (QDs) emitting in the telecom O-band. The quantum devices arefabricated using in-situ electron beam lithography in combination with thethermocompression bonding to realize a backside gold mirror. Our structures arebased on InGaAs/GaAs heterostructures, where the QD emission is redshiftedtowards the telecom O-band at 1.3 {\mu}m via a strain reducing layer. QDspre-selected by cathodoluminescence mapping are embedded into mesa structureswith a back-side gold mirror for enhanced photon-extraction efficiency.Photon-autocorrelation measurements under pulsed non-resonant wetting-layerexcitation are performed at temperatures up to 40 K showing pure single-photonemission which makes the devices compatible with stand-alone operation usingStirling cryocoolers. Using pulsed p-shell excitation we realize single-photonemission with high multi-photon suppression of g(2)(0) = 0.027 +- 0.005,post-selected two-photon interference of about (96 +- 10) % and an associatedcoherence time of (212 +- 25) ps. Moreover, the structures show an extractionefficiency of ~5 %, which compares well with values expected from numericsimulations of this photonic structure. Further improvements on our deviceswill enable implementations of quantum communication via optical fibers.

Deterministically fabricated quantum dot single-photon source emitting indistinguishable photons in the telecom O-band