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Comprehensive investigations on ZnSe/GaAs and GaAs/ZnSe interfaces werecarried out by photoluminescence (PL) and transmission electron microscopy(TEM), as a part of realizing high quality ZnSe-GaAs (100) hetero-valentstructures (HS). The nature of ZnSe/GaAs interface under different surfaceterminations of GaAs was examined. The ZnSe/Ga-terminated GaAs was found tohave a superior optical and microstructural quality, with a chemical interfaceconsisting of a mixture of both the GaAs and ZnSe atomic constituents. ForGaAs/ZnSe interface studies, a low-temperature migration enhanced epitaxy(LT-MEE) growth technique was used to grow GaAs layers under the conditionscompatible to the growth of ZnSe. Both Ga and As-initialized LT-MEE GaAs/ZnSeinterfaces were investigated. A defective transition layer was observed alongthe As-initialized GaAs/ZnSe interface, which may be attributed to theformation Zn$_3$As$_2$ compound. The correlation between the observed opticalas well as structural properties of both the (GaAs/ZnSe and ZnSe/GaAs)interfaces and the growth conditions used in this study are discussed indetail. This study could provide a valuable insight on the interface nature ofZnSe-GaAs HS.

Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures