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Thermoelectric measurements detect the asymmetry between the density ofstates above and below the chemical potential in a material. It providesinsights into small variations in the density of states near the chemicalpotential, complementing electron transport measurements. Here, combinedresistance and thermoelectric power measurements are performed on vanadiumdioxide (VO2), a prototypical correlated electron material, under ionic-liquid(IL) gating. With IL gating, charge transport below themetal-to-insulator-transition (MIT) temperature remains in the thermallyactivated regime, while the Seebeck coefficient exhibits an apparent transitionfrom semiconducting to metallic behavior. The contrasting behavior indicateschanges in electronic structure upon IL gating, due to the formation of oxygendefect states. The experimental results are corroborated by numericalsimulations based on a model density of states incorporating a gating induceddefect band. This study reveals thermoelectric measurements to be a convenientand sensitive probe for the role of defect states induced by IL gating insuppressing the MIT in VO2, which remains benign in charge transportmeasurements, and possibly for studying defect sates in other materials.

Thermoelectric probe of defect state induced by ionic liquid gating in vanadium dioxide