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In this study, we propose a measurement technique for evaluatingferroelectric polarization characteristics in ferroelectric field-effecttransistors (FeFETs). Different from standard metal/ferroelectric/metalcapacitors, the depletion and inversion phenomena in semiconductor substrateshave to be carefully taken into account when evaluating the ferroelectricproperties using fast voltage sweep as input. The non-equilibrium deepdepletion is found to be the limiting factor for the accurate evaluation offerroelectric properties in metal/ferroelectric/semiconductor capacitors. Byconnecting the source, drain, and substrate of the FeFET together during thepolarization measurement, the deep depletion can be suppressed and theferroelectricity of the ferroelectric gate can be accurately evaluated. Thepresent technique is a powerful method for capturing the polarization states inFeFETs, enabling new approaches for device characterization and fundamentalstudy, and overcomes the limitation found in the conventional polarizationmeasurement on 2-terminal metal/ferroelectric/semiconductor capacitors.

Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors