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We report on current oscillations in quasi two-dimensional (2D) 1T-TaS2charge-density-wave devices. The MHz-frequency range of the oscillations andthe linear dependence of the frequency of the oscillations on the currentresemble closely the "narrow band noise," which was often observed in theclassical bulk quasi-one-dimensional (1D) trichalcogenide charge-density-wavematerials. In bulk quasi-1D materials, the "narrow band noise" was interpretedas a direct evidence of the charge-density-wave sliding. Despite thesimilarities, we argue that the nature of the MHz oscillations in quasi-2D1T-TaS2 is different from the "narrow band noise." Analysis of the biasingconditions and current indicate that the observed oscillations are related tothe current instabilities due to the voltage-induced transition from the nearlycommensurate to incommensurate charge-density-wave phase.

Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the "Narrow Band Noise" Concept