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The proximity effect opens ways to transfer properties from one material intoanother and is especially important in two-dimensional materials. In van derWaals heterostructures, transition metal dichalcogenides (TMD) can be used toenhance the spin-orbit coupling of graphene leading to the prediction of gatecontrollable spin-to-charge conversion (SCC). Here, we report for the firsttime and quantify the SHE in graphene proximitized with WSe$_2$ up to roomtemperature. Unlike in other graphene/TMD devices, the sole SCC mechanism isthe spin Hall effect and no Rashba-Edelstein effect is observed. Importantly,we are able to control the SCC by applying a gate voltage. The SCC shows a highefficiency, measured with an unprecedented SCC length larger than 20 nm. Theseresults show the capability of two-dimensional materials to advance towards theimplementation of novel spin-based devices and future applications.

Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$