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Spin-based memories are attractive for their non-volatility and highdurability but provide modest resistance changes, whereas semiconductor logictransistors are capable of large resistance changes, but lack memory functionwith high durability. The recent availability of multiferroic materialsprovides an opportunity to directly couple the change in spin states of amagnetic memory to a charge change in a semiconductor transistor. In this work,we propose and analyze the spin-orbit torque field-effect transistor (SOTFET),a device with the potential to significantly boost the energy efficiency ofspin-based memories, and to simultaneously offer a palette of newfunctionalities.

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory