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La-doped ASnO3 (A = Ba, Sr) have great potential as advanced transparentoxide semiconductors due to their large optical bandgap and relatively highelectron mobility. The bandgap of Ba1-xSrxSnO3 solid solution increases from3.2 eV (BaSnO3) to 4.6 eV (SrSnO3) with x. However, the increase in the bandgapis accompanied by reductions in the electrical conductivity. The versatility inthe changes in the electrical properties are not trivial, and the propertyoptimization has been challenging. Here we propose a simple metric forquantifying the transport properties of ASnO3. We investigated theelectron/thermal transport properties of Ba1-xSrxSnO3 solid solution films andtheir relationship with the lattice distortion. The results suggest that theall transport properties of Ba1-xSrxSnO3 are dominated by the latticedistortion. This phenomenon is attributed to the distortions in the SnO6octahedron, which consists the conduction band.

Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films