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The maximum optical gain and the spontaneous noise enhancement factor in quantum well structures are expressed as extremely simple functions that are accurate over a wide range of carrier densities. These expressions are used to study the effect of doping on the optical gain and the noise enhancement factor in a 100 A InGaAs/InP quantum well structure. n-type doping is most effective in reducing the transparency excitation level (laser threshold) and the noise enhancement factor (amplifier noise figure), whereas p-type doping enables increased gain at a given excitation level.

applied physics letters

Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions