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We have measured the distribution of group III metals at In0.53Ga0.47As/In0.52Al0.48As interfaces before and after annealing at 1085 K. We find little evidence for Al interdiffusion, but the Ga concentration profiles show some broadening on annealing. Also, the originally nearly constant In profiles develop strong modulations with near discontinuities at the original interfaces. This phenomenon is explained and modeled in terms of In diffusion in the chemical potential gradient established by the disparity of the Al and Ga mobilities and the requirement of III‐V stoichiometry in the alloys

Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface