English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga‐rich ledges on the (110) surface has been shown to be the necessary condition for two‐dimensional growth. The layers exhibit a room‐temperature electron mobility of ∼5700 cm2/V s for NSi∼4×1015 and a strong exciton photoluminescence emission at 4 K. This breakthrough in MBE growth of III‐V compounds allows for fabrication of (110) GaAs devices which will take advantage of the unique properties of this orientation.

Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy