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The influence of dose rate, i.e., ion flux, on ion beam mixing in Nb‐Si bilayer samples was measured at room temperature and 325 °C. At the higher temperature, an increase in dose rate of a factor of 20 caused a decrease in the thickness of the mixed layer by a factor of 1.6 for equal total doses. At room temperature, the same change in flux had no effect on mixing. These results are consistent with radiation‐enhanced diffusion theory in the recombination‐limited regime.

Effect of dose rate on ion beam mixing in Nb-Si