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Photonic crystal (PhC) nanocavities with high quality (Q) factors haveattracted much attention because of their strong spatial and temporal lightconfinement capability. The resulting enhanced light-matter interactions arebeneficial for diverse photonic applications, ranging from on-chip opticalcommunications to sensing. However, currently achievable Q factors for activePhC nanocavities, which embed active emitters inside, are much lower than thoseof the passive structures because of large optical loss, presumably originatingfrom light scattering by structural imperfections and/or optical absorptions.Here, we demonstrate a significant improvement of Q factors up to ~160,000 inGaAs active PhC nanocavities using a sulfur-based surface passivationtechnique. This value is the highest ever reported for any active PhCnanocavities with semiconductor quantum dots. The surface-passivated cavitiesalso exhibit reduced variation in both Q factors and cavity resonantwavelengths. We find that the improvement in the cavity performance presumablyarises from suppressed light absorption at the surface of the PhC's hostmaterial by performing a set of PL measurements in spectral and time domains.With the surface passivation technique, we also demonstrate a strongly-coupledsingle quantum dot-cavity system based on a PhC nanocavity with a high Q factorof ~100,000. These results will pave the way for advanced quantum dot-basedcavity quantum electrodynamics and for GaAs micro/nanophotonic applicationscontaining active emitters.

Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots