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The eXciton Franz-Keldysh (XFK) effect is observed in GaN p-n junction diodesvia the spectral variation of photocurrent responsivity data that redshift andbroaden with increasing reverse bias. Photocurrent spectra are quantitativelyfit over a broad photon energy range to an XFK model using only a single fitparameter that determines the lineshape, the local bias ($V_{l}$), uniquelydetermining the local electric field maximum and depletion widths. As expected,the spectrally determined values of $V_{l}$ vary linearly with the applied bias($V$) and reveal a large reduction in the local electric field due toelectrostatic non-uniformity. The built-in bias ($V_{bi}$) is estimated byextrapolating $V_{l}$ at $V=0$, which compared with independent C-Vmeasurements indicates an overall $\pm$0.31 V accuracy of $V_{l}$. Thisdemonstrates sub-bandgap photocurrent spectroscopy as a local probe of electricfield in wide bandgap diodes that can be used to map out regions of devicebreakdown (hot spots) for improving electrostatic design of high voltagedevices.

Local Electric Field Measurement in GaN Diodes by exciton Franz-Keldysh Photocurrent Spectroscopy