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A compact low-energy and high-intensity electron source for material agingapplications is presented. A laser-induced plasma moves inside a 30 kV diodeand produces a 5 MW electron beam at the anode location. The corresponding dosethat can be deposited into silicon or gallium samples is estimated to be 25 kGyper laser shot. The dose profile strongly depends on the cathode voltage andcan be adjusted from 100 nm to 1 $\mu$m. With this versatile source, a path isopened to study micro or nano-electronic components under high irradiation,without the standard radioprotection issues.

A versatile and compact high-intensity electron beam for multi-kGy irradiation in nano or micro-electronic devices