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A non-vanishing electric field inside a non-centrosymmetric bulk crystaltransforms into a momentum- dependent magnetic field, namely, a spin-orbitfield (SOF). SOFs are of great use in spintronics because they enable spinmanipulation via the electric field. At the same time, however, spintronicapplications are severely limited by the SOF, as electrons traversing the SOFeasily lose their spin information. Here, we propose that in-planeferroelectricity in (001)-oriented SnTe thin films harness the Janus-faced SOFin a reconcilable way to enable electrical spin controllability and suppressspin dephasing. The in-plane ferroelectricity produces a unidirectionalout-of-plane Rashba SOF that can host a long-lived helical spin mode known as apersistent spin helix (PSH). Through direct coupling between the inversionasymmetry and the SOF, the ferroelectric switching reverses the out-of-planeRashba SOF, giving rise to a maximally field-tunable PSH. Furthermore, thegiant out- of-plane Rashba SOF seen in the SnTe thin films is linked to thenano-sized PSH, potentially reducing spintronic device sizes to the nanoscale.We combine the two ferroelectric-coupled degrees of freedom, longitudinalcharge and transverse PSH, to design intersectional electro-spintronictransistors governed by non-volatile ferroelectric switching within nanoscalelateral and atomic-thick vertical dimensions.

Harnessing the giant out-of-plane Rashba effect and the nanoscale persistent spin helix via ferroelectricity in SnTe thin films