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We have examined the formation mechanisms of GaN quantum dots (QDs) viaannealing of Ga droplets in a nitrogen flux. We consider the temperature andsubstrate dependence of the size distributions of droplets and QDs, as well asthe relative roles of Ga/N diffusivity and GaN nucleation rates on QDformation. We report on two competing mechanisms mediated by Ga surfacediffusion, namely QD formation at or away from pre-existing Ga droplets. Wediscuss the relative roles of nucleation and coarsening dominant growth, aswell as the polytype selection, on various substrates. The new insights providean opportunity for tailoring QD size and polytype distributions for a widerange of III-N semiconductor QDs.

Mechanisms of GaN quantum dot formation during nitridation of Ga droplets