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High entropy oxides (HEOs) are a class of materials, containing equimolarportions of five or more transition metal and/or rare-earth elements. We reporthere about the layer-by-layer growth of HEO[(La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$)NiO$_3$] thin films onNdGaO$_3$ substrates by pulsed laser deposition. The combined characterizationswith in-situ reflection high energy electron diffraction, atomic forcemicroscopy, and X-ray diffraction affirm the single crystalline nature of thefilm with smooth surface morphology. The desired +3 oxidation of Ni has beenconfirmed by an element sensitive X-ray absorption spectroscopy measurement.Temperature dependent electrical transport measurements revealed a first ordermetal-insulator transition with the transition temperature very similar to theundoped NdNiO$_3$. Since both of these systems have a comparable tolerancefactor, this work demonstrates that the electronic behaviors of $A$-sitedisordered perovskite-HEOs are primarily controlled by the average tolerancefactor.

Epitaxial stabilization of ultra thin films of high entropy perovskite