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Polar metals are an intriguing class of materials that simultaneously hostfree carriers and polar structural distortions. Despite the name "polar metal,"however, most well-studied polar metals are poor electrical conductors. Here,we demonstrate the molecular beam epitaxial (MBE) growth of LaPtSb and LaAuGe,two polar metal compounds whose electrical resistivity is an order of magnitudelower than the well studied oxide polar metals. These materials belong to abroad family of $ABC$ intermetallics adopting the stuffed wurtzite structure,also known as hexagonal Heusler compounds. Scanning transmission electronmicroscopy (STEM) reveals a polar structure with unidirectionally buckled $BC$(PtSb, AuGe) planes. Magnetotransport measurements demonstrate good metallicbehavior with low residual resistivity ($\rho_{LaAuGe}=59.05$$\mu\Omega\cdot$cm and $\rho_{LaAPtSb}=27.81$ $\mu\Omega\cdot$cm at 2K) andhigh carrier density ($n_h\sim 10^{21}$ cm$^{-3}$). Photoemission spectroscopymeasurements confirm the band metallicity and are in quantitative agreementwith density functional theory (DFT) calculations. Through DFT-ChemicalPressure and Crystal Orbital Hamilton Population analyses, the atomic packingfactor is found to support the polar buckling of the structure, though thedegree of direct interlayer $B-C$ bonding is limited by repulsion at the $A-C$contacts. When combined with insulating hexagonal Heuslers, these materialsprovide a new platform for fully epitaxial, multiferroic heterostructures.

High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb