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The possibility to develop neuromorphic computing devices able to mimic theextraordinary data processing capabilities of biological systems spurs theresearch on memristive systems. Memristors with additional functionalities suchas robust memcapacitance can outperform standard devices in key aspects such aspower consumption or miniaturization possibilities. In this work, wedemonstrate a large memcapacitive response of a perovskite memristiveinterface, using the topotactic redox ability ofLa$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-\delta}$ (LSMCO, 0 $\leq$$\delta$ $\leq$ 0.62). We demonstrate that the multi-mem behaviour originatesat the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We foundfor our Nb:SrTiO$_{3}$/LSMCO/Pt devices a memcapacitive effectC$_{HIGH}$/C$_{LOW}$ ~ 100 at 150 kHz. The proof-of-concept interface reportedhere opens a promising venue to use topotactic redox materials for disruptivenanoelectronics, with straightforward applications in neuromorphic computingtechnology.

Large memcapacitance and memristance at Nb:SrTiO$_{3}$ / La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-\delta}$ Topotactic Redox Interface