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Integrating patterned, low-loss magnetic materials into microwave devices andcircuits presents many challenges due to the specific conditions that arerequired to grow ferrite materials, driving the need for flip-chip and otherindirect fabrication techniques. The low-loss ($\alpha = 3.98 \pm 0.22 \times10^{-5}$), room-temperature ferrimagnetic coordination compound vanadiumtetracyanoethylene ($\mathrm{V[TCNE]}_x$) is a promising new material for theseapplications that is potentially compatible with semiconductor processing. Herewe present the deposition, patterning, and characterization of$\mathrm{V[TCNE]}_x$ thin films with lateral dimensions ranging from 1 micronto several millimeters. We employ electron-beam lithography and liftoff usingan aluminum encapsulated poly(methyl methacrylate), poly(methylmethacrylate-methacrylic acid) copolymer bilayer (PMMA/P(MMA-MAA)) on sapphireand silicon. This process can be trivially extended to other commonsemiconductor substrates. Films patterned via this method maintain low-losscharacteristics down to 25 microns with only a factor of 2 increase down to 5microns. A rich structure of thickness and radially confined spin-wave modesreveals the quality of the patterned films. Further fitting, simulation, andanalytic analysis provides an exchange stiffness, $A_{ex} = 2.2 \pm 0.5 \times10^{-10}$ erg/cm, as well as insights into the mode character and surface spinpinning. Below a micron, the deposition is non-conformal, which leads tointeresting and potentially useful changes in morphology. This work establishesthe versatility of $\mathrm{V[TCNE]}_x$ for applications requiring highlycoherent magnetic excitations ranging from microwave communication to quantuminformation.

Low-Damping Ferromagnetic Resonance in Electron-Beam Patterned, High-$Q$ Vanadium Tetracyanoethylene Magnon Cavities