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We present direct imaging measurements of charge transport across a 1 cm x 1cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) attemperatures of 5 K and 500 mK. We use these data to measure the lateraldiffusion of electrons and holes as a function of the electric field appliedalong the [111] crystal axis, and to verify our low-temperature Monte Carlosoftware. The range of field strengths in this paper exceed those used in theprevious study (DOI: 10.1063/1.5049691) by a factor of 10, and now encompassesthe region in which some recent silicon dark matter detectors operate (DOI:10.1103/PhysRevLett.121.051301). We also report on a phenomenon of surfacecharge trapping which can reduce expected charge collection.

High-field Spatial Imaging of Charge Transport in Silicon at Low Temperature