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Wide and ultra-wide band gap semiconductors can provide excellent performancedue to their high energy band gap, which leads to breakdown electric fieldsthat are more than an order of magnitude higher than conventional siliconelectronics. In materials where p-type doping is not available, achieving thishigh breakdown field in a vertical diode or transistor is very challenging. Wepropose and demonstrate the use of dielectric heterojunctions that use extremepermittivity materials to achieve high breakdown field in a unipolar device. Wedemonstrate the integration of a high permittivity material BaTiO3 with n-type$\beta$-Ga2O3 to enable 5.7 MV/cm average electric field and 7 MV/cm peakelectric field at the device edge, while maintaining forward conduction withrelatively low on-resistance and voltage loss. The proposed dielectricheterojunction could enable new design strategies to achieve theoretical deviceperformance limits in wide and ultra-wide band gap semiconductors where bipolardoping is challenging.

Metal$/BaTiO_{3}/\beta-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field