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La-doped SrSnO3 (LSSO) is known as one of deep-ultraviolet (DUV)-transparentconducting oxides with an energy bandgap of ~4.6 eV. Since LSSO can be grownheteroepitaxially on more wide bandgap substrates such as MgO (Eg ~7.8 eV),LSSO is considered to be a good candidate as a DUV-transparent electrode.However, the electrical conductivity of LSSO films are below 1000 S cm^-1, mostlikely due to the low solubility of La ion in the LSSO lattice. Here we reportthat high electrically conducting (>3000 S cm^-1) LSSO thin films with anenergy bandgap of ~4.6 eV can be fabricated by pulsed laser deposition on MgOsubstrate followed by a simple annealing in vacuum. From the X-ray diffractionand the scanning transmission electron microscopy analyses, we found thatlateral grain growth occurred during the annealing, which improved theactivation rate of La ion, leading to a significant improvement of carrierconcentration (3.26 x 10^20 cm^-3) and Hall mobility (55.8 cm^2 V^-1 s^-1). Thepresent DUV-transparent oxide semiconductor would be useful as a transparentelectrode for developing optoelectronic devices, which transmit and/or emitDUV-light.

High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ~3000 S cm-1