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Interfaces between two topological insulators are of fundamental interest incondensed matter physics. Inspired by experimental efforts, we studyinterfacial processes between two slabs of BiSbTeSe2 (BSTS) via firstprinciples calculations. Topological surface states are absent for the BSTSinterface at its equilibrium separation, but our calculations show that theyappear if the inter-slab distance is greater than 6 Ang. More importantly, wefind that topological interface states can be preserved by inserting two ormore layers of hexagonal boron nitride between the two BSTS slabs. Inexperiments, the electric current tunneling through the interface isinsensitive to back gate voltage when the bias voltage is small. Using afirst-principles based method that allows us to simulate gate field, we showthat at low bias the extra charge induced by a gate voltage resides on thesurface that is closest to the gate electrode, leaving the interface almostundoped. This provides clues to understand the origin of the observedinsensitivity of transport properties to back voltage at low bias. Our studyresolves a few questions raised in experiment, which does not yet offer a clearcorrelation between microscopic physics and transport data. We provide a roadmap for the design of vertical tunneling junctions involving the interfacebetween two topological insulators.

Gate field effects on the topological insulator BiSbTeSe2 interface