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We explore CdTe fractional monolayer quantum dots (QDs) in a ZnCdSe hostmatrix for potential application in an intermediate band solar cell device.Careful consideration has been taken during the initiation of the growthprocess of QDs by migration enhanced epitaxy, in order to avoid the formationof undesirable interfacial layers that can form due to the lack of common anionbetween the two materials. A superlattice structure of 100 periods ofalternating QD and spacer layers is analyzed by high resolution X-raydiffraction (XRD) and photoluminescent (PL) spectroscopy. Simple arguments areused following continuum elastic theory to deduce the size of the dots and thestrain within the superlattice from XRD data. This is further verified using PLand used in the energy calculations that yield the values of the intermediateband energy. The results suggest that the optimized materials are highlysuitable for these high efficiency solar cells.

Advanced material system for the design of an intermediate band solar cell: type-II CdTe quantum dots in a ZnCdSe matrix