English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report on the direct measurement of hot electrons generated in the activeregion of blue light-emitting diodes grown by ammonia molecular beam epitaxy byelectron emission spectroscopy. The external quantum efficiency of thesedevices is <1% and does not droop; thus, the efficiency losses from theintrinsic, interband, electron-electron-hole, or electron-hole-hole Augershould not be a significant source of hot carriers. The detection of hotelectrons in this case suggests that an alternate hot electron generatingprocess is occurring within these devices, likely a trap-assisted Augerrecombination process.

Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy