English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The electronic structure of strain-engineered single InGaAs/GaAs quantum dotsemitting in the telecommunication O band is probed experimentally byphotoluminescence excitation spectroscopy. Observed resonances can beattributed to p-shell states of individual quantum dots. The determined energydifference between s-shell and p-shell shows an inverse dependence on theemission energy. The experimental data are compared with the results ofconfined states calculations, where the impact of the size and composition inthe investigated structures is simulated within the 8-band$\mathbf{k}\cdot\mathbf{p}$ model. On this basis, the experimental observationis attributed mainly to changes in indium content within individual quantumdots, indicating a way of engineering and selecting a desired quantum dot,whose electronic structure is the most suitable for a given nanophotonicapplication.

Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 {\mu}m