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RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN(0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is foundto lead to a face centered cubic (rock-salt) crystal structure with (111)out-of-plane orientation instead of hexagonal orientation. For the first time,cubic (111) twinned patterns in ScN are observed by in-situ electrondiffraction during epitaxy, and the twin domains in ScN are detected byelectron backscattered diffraction, and further corroborated with X-raydiffraction. The epitaxial ScN films display very smooth, sub nanometer surfaceroughness at a growth temperature of 750C. Temperature-dependent Hall-effectmeasurements indicate a constant high n-type carrier concentration of~1x1020/cm3 and electron mobilities of ~ 20 cm2/Vs.

Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN