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We investigate thermal rectification in nanoporous silicon using asemi-classical Monte Carlo (MC) simulation method. We consider geometricallyasymmetric nanoporous structures, and investigate the combined effects ofporosity, inter-pore distance, and pore position relative to the deviceboundaries. Two basis geometries are considered, one in which the pores arearranged in rectangular arrays, and ones in which they form triangulararrangements. We show that systems: i) with denser, compressed porearrangements (i.e with smaller inter-pore distances), ii) with pores positionedcloser to the device edge/contact, and iii) with pores in a triangulararrangement, can achieve rectification of over 55%. Introducing smaller poresinto existing porous geometries in a hierarchical fashion increasesrectification even further to over 60%. Importantly, for the structures wesimulate, we show that sharp rectifying junctions, separating regions of longfrom short phonon mean-free-paths are more beneficial for rectification thanspreading the asymmetry throughout the material along the heat direction in agraded fashion.

Thermal rectification optimization in nanoporous Si using Monte Carlo simulations