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We describe the use of laser-enhanced etching of fused silica in order tobuild multi-layer ion traps. This technique offers high precision of bothmachining and alignment of adjacent wafers. As examples of designs takingadvantage of this possibility, we describe traps for realizing two key elementsof scaling trapped ion systems. The first is a trap for a cavity-QED interfacebetween single ions and photons, in which the fabrication allows shapes thatprovide good electro-static shielding of the ion from charge build-up on themirror surfaces. The second incorporates two X-junctions allowingtwo-dimensional shuttling of ions. Here we are able to investigate designswhich explore a trade-off between pseudo-potential barriers and confinement atthe junction center. In both cases we illustrate the design constraints arisingfrom the fabrication.

Segmented ion-trap fabrication using high precision stacked wafers