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We investigate lanthanum (La) as an n-type dopant in the strain-stabilizedtetragonal phase of SrSnO3 grown on GdScO3 (110) using a radical-based hybridmolecular beam epitaxy approach. Fully coherent, epitaxial films withatomically smooth film surface were obtained irrespective of doping density. Bycombining secondary ion mass spectroscopy and Hall measurements, we demonstratethat each La atom contributes to one electron to the film confirming itoccupies Sr-site in SrSnO3 and that it is completely activated. Carrier densityexceeding 1 x 10^20 cm-3 was achieved in LSSO films, which is in excellentagreement with the dopant-solubility limit predicted by the density functionaltheory calculations. A record-high room-temperature mobility of 70 cm2V-1s-1 at1 x 10^20 cm-3 was obtained in 12 nm La-doped SrSnO3 film making this thethinnest perovskite oxide semiconductor with a reasonably high electronmobility at room temperature. We discuss the structure-dopant-transportproperty relationships providing essential knowledge for the design ofelectronic devices using these materials.

Dopant Solubility, and Charge Compensation in La-doped SrSnO3 Films