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Memristors can mimic the functions of biological synapse, where it cansimultaneously store the synaptic weight and modulate the transmitted signal.Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching,exhibiting synapse like property of gradual and continuously change ofconductance with subsequent voltage signals. Mimicking of basic functions ofremembering and forgetting processes of biological brain were demonstratedthrough short term plasticity, spike rate dependent plasticity, paired pulsefacilitation and post-titanic potentiation. The device layer interface tuningwas shown to affect the device properties shift from digital to analogbehaviour. Demonstration of basic synaptic functions in the NbOx based devicesmakes them suitable for neuromorphic applications.

NbOx based memristor as artificial synapse emulating short term plasticity