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The present study reports Al induced crystallization (AIC) of amorphous(a)-SiGe in Al-Ge-Si ternary system at low temperature ~ 350 degree C. Inaddition to crystallization, the isothermal annealing ofa-SiGe/AlOx/Al/corning-glass (CG) structure was found to be accompanied by anAl induced layer exchange (ALILE) phenomenon. The evolution of residual stressin the Al layer during isothermal annealing is evaluated using X-raydiffraction based technique to ascertain the role of stress in the ALILEprocess. A corroboration of the stress with the growth kinetics, analyzed usingAvrami theory of phase transformation gives a comprehensive understanding ofthe ALILE crystallization process in this system. The grown polycrystallineSiGe thin film is a potential candidate for novel technological applications insemiconductor devices.

Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass