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Monolayer transition metal dichalcogenides (TMDs) bare large Berry curvaturehotspots readily exploitable for geometric band effects. Tailoring andenhancement of these features via strain is an active research direction. Here,we consider spinless two- and three-band, and spinful four-band models capableto quantify Berry curvature and orbital magnetic moment of strained TMDs.First, we provide a $k\cdot p$ parameter set for MoS$_2$, MoSe$_2$, WS$_2$, andWSe$_2$ in the light of the recently released ab initio and experimental bandproperties. Its validity range extends from $K$ valley edge to about hundredmillielectron volts into valence and conduction bands for these TMDs. To expandthis over a larger part of the Brillouin zone, we incorporate strain to anavailable three-band tight-binding Hamiltonian. With these techniques wedemonstrate that both the Berry curvature and the orbital magnetic moment canbe doubled compared to their intrinsic values by applying typically a 2.5%biaxial tensile strain. These simple band structure tools can find applicationin the quantitative device modeling of the geometric band effects in strainedmonolayer TMDs.

Geometric band properties in strained monolayer transition metal dichalcogenides using simple band structures