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The spin-orbit coupling and electron correlation in perovskite SrIrO3 (SIO)strongly favor new quantum states and make SIO very attractive for nextgeneration quantum information technology. In addition, the small electronicband-width offers the possibility to manipulate anisotropic electronictransport by strain. However, twinned film growth of SIO often masks electronicanisotropy which could be very useful for device applications. We demonstratethat the twinning of SIO films on (001) oriented SrTiO3 (STO) substrates can bestrongly reduced for thin films with thickness t less than 30 nm by usingsubstrates displaying a TiO2-terminated surface with step-edge alignmentparallel to the a- or b-axis direction of the substrate. This allows us tostudy electronic anisotropy of strained SIO films which hitherto has beenreported only for bulk-like SIO. For films with t < 30 nm electronic anisotropyincreases with increasing t and becomes even twice as large compared to nearlystrain-free films grown on (110) DyScO3. The experiments demonstrate the highsensitivity of electronic transport towards structural distortion and thepossibility to manipulate transport by substrate engineering.

Suppression of twinning and enhanced electronic anisotropy of SrIrO3 films