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A phase field method is used to computationally study conducting channelmorphology of resistive switching thin film structures. Our approachsuccessfully predicts the formation of conducting channels in typicaldielectric thin film structures, comparable to a range of resistive switches,offering an alternative computational formulation based on metastable statestreated at the atomic scale. In contrast to previous resistive switching thinfilm models, our formulation makes no a priori assumptions on conductingchannel morphology and its fundamental transport mechanisms.

journal of applied physics

A Computational Phase Field Study of Conducting Channel Formation in  Dielectric Thin Films: A View Towards the Physical Origins of Resistive  Switching