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This work investigates the effect of the polarization anisotropy on the linewidth enhancement factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth enhancement factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.This work investigates the effect of the polarization anisotropy on the linewidth enhancement factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth enhancement factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.

applied physics letters

Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55-<b> <i>μ</i> </b>m InP-based InAs quantum dash lasers

Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers