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Monocrystalline silicon solar cells with photo-absorbing morphology canamplify light-trapping properties within the absorber layer and help tofabricate cost-effective solar cells. In this paper, the effect of differentparameters namely temperature and time of Cu-assisted chemical etching wasthoroughly investigated for the optimization of the light absorptionproperties. P-type monocrystalline wafers were selectively treated withCu(NO3)2.3H2O:HF:H2O2:DI water solution at 50 deg.C for five different timeduration. The entire process was repeated at five different temperatures for20min as well to study the relation between etching temperature and surfacereflectance. Sonication bathing was used for the removal of the deposited Cuatoms from the surface with the variation of time and the effect was examinedusing energy dispersive spectroscopy (EDS). Field emission scanning electronmicroscopy (FESEM) and UV/VIS spectroscopy were conducted to study the surfacemorphology and light absorbance respectively. Inverted shapes almost similar toinverted pyramids or porous surface were found randomly on the surface of thewafer. The effect of temperature was found more significant compared to theeffect of time variation. An optimum light reflectance was found at 50 deg.Cfor 20 min of texturization. Atomic force microscopy (AFM) of the texturedsample revealed the average depth of pyramidal shape was about 1.58 micrometer. EDS results showed a proportional relation between time and Cu removalprocess, and a complete Cu atoms free textured surface after 25 min ofsonication bathing. Therefore, a suitable Cu-assisted texturization techniquewas found, which could enable lowering the photo-reflectance below 1% withoutany antireflection coating.

Study and analysis the Cu nanoparticle assisted texturization forming low reflective silicon surface for solar cell application