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InGaN light-emitting diodes (LEDs) are more efficient and cost effective thanincandescent and fluorescent lighting, but lattice mismatch limits thethickness of InGaN layers that can be grown on GaN withoutperformance-degrading dislocations. In this work, we apply hybrid densityfunctional theory calculations to investigate the thermodynamic stability,lattice parameters, and band gaps of wurtzite and zincblende quaternary BInGaNalloys. We find that the wurtzite phase is more stable and can belattice-matched to GaN for BInGaN compositions containing up to ~30% boron. Thelattice match with GaN decreases strain and enables thicker active layers thatmitigate Auger recombination and increase the efficiency of the LEDs. The bandgap of the alloy remains tunable throughout the visible spectrum. Our resultsindicate that BInGaN alloys are promising alternatives to InGaN forhigh-efficiency, high-power LEDs.

Lattice-Constant and Band-Gap Tuning in Wurtzite and Zincblende BInGaN Alloys