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Great achievements have been made in alloying of two-dimensional (2D)semiconducting transition metal dichalcogenides (TMDs), which can allow tunableband gaps for practical applications in optoelectronic devices. However,telluride-based TMDs alloys were less studied due to the difficulties of samplesynthesis. Here, in this work we report the large-area synthesis of 2DMoTexSe2-x alloy films with controllable Te composition by a modified alkalimetal halides assisted chemical vapor deposition method. The as-prepared filmshave millimeter-scale transverse size. Raman spectra experiments combiningcalculated Raman spectra and vibrational images obtained by density functionaltheory (DFT) confirmed the 2H-phase of the MoTexSe2-x alloys. The A1g mode ofMoSe2 shows a significant downshift accompanied by asymmetric broadening tolower wavenumber with increasing value of x, while E12g mode seems unchanged,which were well explained by a phonon confinement model. Our work provides asimple method to synthesize large-scale 2H phase Te-based 2D TMDs alloys fortheir further applications.

Large-area synthesis of continuous two-dimensional MoTexSe2-x alloy films by chemical vapor deposition