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$\text{Ge}_{1-y}\text{Sn}_y$ alloys with compositions in the 0.15 < $y$ <0.30 range have been grown directly on Si substrates using a chemical vapordeposition approach that allows for growth temperatures as high as 290$^{\circ}$C. The films show structural properties that are consistent withresults from earlier materials with much lower Sn concentrations. These includethe lattice parameter and the Ge-Ge Raman frequency, which are found to dependlinearly on composition. The simplicity of the structures, directly grown onSi, makes it possible to carry out detailed optical studies. Sharp absorptionedges are found, reaching 8 $\mu$m near $y$ =0.3. The compositional dependenceof edge energies shows a cubic deviation from the standard quadratic alloyexpression. The cubic term may dramatically impact the ability of the alloys tocover the long-wavelength (8-12 $\mu$m) mid-IR atmospheric window.

Mid-infrared (3-8 {\mu}m) $\text{Ge}_{1-y}\text{Sn}_y$ alloys (0.15 < $y$ < 0.30): synthesis, structural, and optical properties