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To make complementary GaN electronics more than a pipe dream, it is essentialto understand the low mobility of 2D hole gases in III-Nitrideheterostructures. This work derives both the acoustic and optical phononspectra present in one of the most prominent p-channel heterostructures (theall-binary GaN/AlN stack) and computes the interactions of these spectra withthe 2D hole gas, capturing the temperature dependence of its intrinsicmobility. Finally, the effects of strain on the electronic structure of theconfined 2D hole gas are examined and a means is proposed to engineer thestrain to improve the 2D hole mobility for enhanced p-channel deviceperformance, with the goal of enabling wide-bandgap CMOS.

Wurtzite Phonons and the Mobility of a GaN/AlN 2D Hole Gas