English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We investigate the electronic transport property of lateral heterojunctionsof semiconducting and metallic transition-metal dichalcogenide monolayers,MoSe$_2$ and NbSe$_2$, respectively. We calculate the electronic transmissionprobability by using a multi-orbital tight-binding model based on thefirst-principles band structure. The transmission probability depends on thespin and valley degrees of freedom. This dependence qualitatively changes bythe interface structure. The heterostructure with a zig-zag interface preservesthe spin and the valley of electron in the transmission process. On the otherhand, the armchair interface enables conduction electrons to transmit withchanging the valley and increases the conductance in hole-doped junctions dueto the valley-flip transmission. We also discuss the spin and valleypolarizations of electronic current in the heterojunctions.

Electronic transmission in the lateral heterostructure of semiconducting and metallic transition-metal dichalcogenide monolayers