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Serial connection of multiple memory cells using perpendicular magnetictunnel junctions (pMTJ) is proposed as a way to increase magnetic random accessmemory (MRAM) storage density. Multi-bit storage element is designed usingpMTJs fabricated on a single wafer stack, with a serial connections realizedusing top-to-bottom vias. Tunneling magnetoreistance effect above 130%, currentinduced magnetization switching in zero external magnetic field and stabilitydiagram analysis of single, two-bit and three-bit cells are presented togetherwith thermal stability. The proposed design is easy to manufacture and can leadto increase capacity of future MRAM devices.

Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions