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The temperature ($\it T$) dependence of electrical resistivity in graphenehas been experimentally investigated between 10 and 400 K for samples preparedon various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of grapheneshows a linear $\it T$-dependence at low $\it T$ and becomes superlinear abovea substrate-dependent transition temperature. The results are explained byremote interfacial phonon scattering by surface optical phonons at thesubstrates. The use of an appropriate substrate can lead to a significantimprovement in the charge transport of graphene.

Role of remote interfacial phonons in the resistivity of graphene