English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We present a study of the pulsed current switching characteristics ofspin-valve nanopillars with in-plane magnetized dilute permalloy and undilutedpermalloy free layers in the ballistic regime at low temperature. The dilutepermalloy free layer device switches much faster: the characteristic switchingtime for a permalloy free (Ni0.83Fe0.17) layer device is 1.18 ns, while thatfor a dilute permalloy ([Ni0.83Fe0.17]0.6Cu0.4) free layer device is 0.475 ns.A ballistic macrospin model can capture the data trends with a reduced spintorque asymmetry parameter, reduced spin polarization and increased Gilbertdamping for the dilute permalloy free layer relative to the permalloy devices.Our study demonstrates that reducing the magnetization of the free layerincreases the switching speed while greatly reducing the switching energy andshows a promising route toward even lower power magnetic memory devicescompatible with superconducting electronics.

Sub-nanosecond switching in a cryogenic spin-torque spin-valve memory element with a dilute permalloy free layer